NAND flash memory device and method of forming a well of a...

Details NAND flash memory device and method of forming a well of a... NAND flash memory device and method of forming a well of a...

2004-12-13

2009-06-23

Nguyen, Dang T (Department: 2824)

Static information storage and retrieval

Addressing

Plural blocks or banks

C365S185110, C365S185170

Reexamination Certificate

active

07551511

ABSTRACT:
Disclosed herein are a NAND flash memory device and a method of forming a well of the NAND flash memory device. Triple wells of a NAND flash memory device are formed within a cell region in plural. A cell block including flash memory cells is formed on the triple wells. Accordingly, during an erase operation of a flash memory device, a stress time for non-selected blocks can be reduced and erase disturbance can be also prevented, through the plurality of the wells. Further, capacitance between the triple P wells and the triple N well is reduced since triple P wells are divided. Therefore, well bias charging and discharging time can be reduced and an overall erase time budget can be thus reduced.

REFERENCES:
patent: 5625590 (1997-04-01), Choi et al.
patent: 5923587 (1999-07-01), Choi
patent: 6052305 (2000-04-01), Yang et al.
patent: 6475846 (2002-11-01), Marotta et al.
patent: 6512702 (2003-01-01), Yamamura et al.
patent: 6636441 (2003-10-01), Taura
patent: 7272042 (2007-09-01), Nakai
patent: 2002/0118569 (2002-08-01), Jeong et al.
patent: 2005/0253198 (2005-11-01), Lee
patent: 11-297865 (1999-10-01), None
patent: 2002-151605 (2002-05-01), None
patent: 10-2004-0083172 (2004-10-01), None
Korean-language Official Action dated Jan. 17, 2006, issued by the Korean Intellectual Property Office, in connection with the Korean counterpart priority application No. 10-2004-0033207.
Official action dated May. 11, 2007 for counterpart Chinese Application No. 200510003767.0 (Chinese original and partial English translation included).

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