Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-01-04
2008-08-19
Nguyen, Tuan T (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185130, C365S230030
Reexamination Certificate
active
07414895
ABSTRACT:
A flash memory device, such as a NAND flash, having an array of floating gate transistor memory cells arranged in a first and second addressable blocks. A voltage source to supply programming voltages to control gates of the floating gate transistor memory cells is provided. The voltage source supplies a pre-charge voltage to the control gates of the floating gate transistor memory cells located in the first addressable block when data is programmed in memory cells of the second addressable block. Methods for pre-charging word lines in unselected array blocks are included.
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Micro)n Technology, Inc.
Nguyen Tuan T
Schwegman Lundberg & Woessner, P.A.
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