NAND flash memory and memory system

Details NAND flash memory and memory system NAND flash memory and memory system

2011-06-14

2011-06-14

Tran, Michael T (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185240

Reexamination Certificate

active

07961516

ABSTRACT:
A NAND flash memory comprising blocks which are units of writing and deletion of data, the block comprising: memory cells from which data corresponding to values of held threshold voltages can be read by applying a reading voltage to control gates of the memory cells; source-side selection gate transistors connected between a common source line and the memory cells; drain-side selection gate transistors connected between a bit line and the memory cells; and monitor cells which are configured as the memory cells and have a threshold voltage set according to monitor data, and from which data corresponding to values of held threshold voltages can be read by applying a decision voltage to control gates of the monitor cells.

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Office Action issued Jun. 25, 2010, in Korean Patent Application No. 10-2008-0122939 (with English-language Translation).
Office Action issued on Jan. 20, 2011 in Korean Patent Application No. 10-2008-0122939 (with English Translation) 5 pages.

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