NAND flash memory

Details NAND flash memory NAND flash memory

2009-03-13

2011-12-20

Hidalgo, Fernando (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185240, C365S185220, C365S185290

Reexamination Certificate

active

08081513

ABSTRACT:
A NAND flash memory has a control circuit. The control circuit applies a writing voltage between a control gate and a well by applying a first voltage to the well and a positive second voltage higher than the first voltage to the control gate during the writing operation, and then the control circuit applies a detrapping voltage between the control gate and the well by applying a third voltage to the control gate and a positive fourth voltage higher than the third voltage to the well before the verification reading operation.

REFERENCES:
patent: 5930173 (1999-07-01), Sekiguchi
patent: 6614693 (2003-09-01), Lee et al.
patent: 6856552 (2005-02-01), Takahashi
patent: 2007/0036001 (2007-02-01), Kanda et al.
patent: 2007/0058433 (2007-03-01), Takeuchi et al.
patent: 2007/0183208 (2007-08-01), Tanaka et al.
patent: 2003-173690 (2003-06-01), None
Koichi Fukuda, et al., “Random Telegraph Noise in Flash Memories—Model and Technology Scaling”, IEDM Tech. Dig., 2007, pp. 169-172.
U.S. Appl. No. 12/727,817, filed Mar. 19, 2010, Fukuda, et al.

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