NAND flash memory

Details NAND flash memory NAND flash memory

2011-03-29

2011-03-29

Luu, Pho M (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185170, C365S185240, C365S185260, C365S185270, C365S185330

Reexamination Certificate

active

07916541

ABSTRACT:
A NAND flash memory, in a read operation, a p-type semiconductor substrate is set at a ground potential, a bit line is charged to a first voltage, a source line, a n-type well and a p-type well are charged to a second voltage, which lies between a ground potential and a first voltage, and in a block not selected by said row decoder, said drain-side select gate line and said source-side select gate line are charged to a third voltage, which is higher than said ground potential and is equal to or lower than said second voltage.

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