NAND flash memory

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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C365S185020, C365S185180

Reexamination Certificate

active

07983086

ABSTRACT:
In a state in which a first and second selection gate transistors are turned off and a first voltage is applied to a control gate of a second memory cell transistor which is connected to a source line side of a first memory cell transistor selected from among the memory cell transistors and which is to be cut off, a second voltage which is higher than the first voltage and which causes a plurality of third memory cell transistors remaining unselected in the memory cell transistors to conduct is applied to control gates of the third memory cell transistors, and thereafter a threshold voltage of the first memory cell transistor is changed to a threshold voltage higher than the first threshold voltage corresponding to the erase state by applying a third voltage which is higher than the second voltage to a control gate of the first memory cell transistor.

REFERENCES:
patent: 5894435 (1999-04-01), Nobukata
patent: 6011287 (2000-01-01), Itoh et al.
patent: 6061270 (2000-05-01), Choi
patent: 6154391 (2000-11-01), Takeuchi et al.
patent: 6208573 (2001-03-01), Tanaka et al.
patent: 6344996 (2002-02-01), Tanaka et al.
patent: 6859397 (2005-02-01), Lutze et al.
patent: 6930921 (2005-08-01), Matsunaga et al.
patent: 7443734 (2008-10-01), Shibata
patent: 2007/0159881 (2007-07-01), Sato et al.
patent: 2007/0177431 (2007-08-01), Matsunaga et al.
patent: 2009/0129158 (2009-05-01), Sato et al.
patent: 10-283788 (1998-10-01), None
patent: 2007-87513 (2007-04-01), None

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