NAND architecture memory devices and operation

Details NAND architecture memory devices and operation NAND architecture memory devices and operation

2009-02-10

2010-06-29

Hur, J. H. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185170, C365S185250, C365S185180

Reexamination Certificate

active

07746700

ABSTRACT:
Non-volatile memory devices utilizing a modified NAND architecture where both ends of the NAND string of memory cells are selectively coupled to the same bit line may facilitate increased memory densities, reduced fabrication steps and faster read operations when compared to traditional NAND memory array architectures. Programming and erasing of the memory cells can be accomplished in the same manner as a traditional NAND memory array. However, reading of the memory cells may be accomplished using charge sharing techniques similar to read operations in a DRAM device.

REFERENCES:
patent: 5754482 (1998-05-01), Su et al.
patent: 5898615 (1999-04-01), Chida
patent: 6147910 (2000-11-01), Hsu et al.
patent: 6222762 (2001-04-01), Guterman et al.
patent: 6646914 (2003-11-01), Haddad et al.
patent: 6747892 (2004-06-01), Khalid
patent: 6870770 (2005-03-01), Roohparvar
patent: 6982904 (2006-01-01), Shiga
patent: 7177197 (2007-02-01), Cernea
patent: 2002/0159315 (2002-10-01), Noguchi et al.
patent: 2003/0214853 (2003-11-01), Hosono et al.
patent: 2005/0036395 (2005-02-01), Maejima et al.
patent: 2005/0141259 (2005-06-01), Kang
patent: 2005/0185466 (2005-08-01), Prall
patent: 2006/0034140 (2006-02-01), Ogawa et al.
patent: 2006/0039197 (2006-02-01), Khouri et al.
patent: 2006/0120172 (2006-06-01), Lee et al.
patent: WO2004/061863 (2004-07-01), None

Affiliated with

Also associated with

Rating

NAND architecture memory devices and operation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with NAND architecture memory devices and operation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and NAND architecture memory devices and operation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4194208