N-word read/write access achieving double bandwidth without incr

Details N-word read/write access achieving double bandwidth without incr N-word read/write access achieving double bandwidth without incr

1992-02-14

1994-08-23

Dixon, Joseph L.

Static information storage and retrieval

Magnetic bubbles

Guide structure

36518902, 365193, 365233, G06F 1200, G11C 700, G11C 800

Patent

active

053414888

ABSTRACT:
An N-word write access memory is described. Using a variation of conventional control signals RAS, CAS, WE and OE, an innovative scheme of signal protocol allows the N-bit word write memory to have an input/output bandwidth double that attained in the prior art, using substantially the same components and without affecting the bit-width, hence, the pin-count, of the external data bus.

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