Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2004-12-21
2008-10-14
Elms, Richard T. (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257SE27064
Reexamination Certificate
active
07436043
ABSTRACT:
A semiconductor device includes multiple low voltage N-well (LVNW) areas biased at different potentials and isolated from a substrate by a common N+buried layer (NBL) and at least one high voltage N-well (HVNW) area. The LVNW areas are coupled to the common, subjacent NBL through a common P+buried layer (PBL). The method for forming the substrate usable in a semiconductor device includes forming the NBL in a designated low voltage area of a negatively biased P-type semiconductor substrate, forming the PBL in a section of the NBL area by implanting P-type impurity ions such as indium into the PBL, and growing a P-type epitaxial layer over the PBL using conditions that cause the P-type impurity ions to diffuse into the P-type epitaxial layer such that the PBL extends into the NBL. Low-voltage P-well areas are also formed in the P-type epitaxial layer and contact the PBL.
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Chang Chi-Hsuen
Chen Chung-I
Huang Chih Po
Liu Jun Xiu
Sung Tzu-Chiang
Duane Morris LLP
Elms Richard T.
Lulis Michael
Taiwan Semiconductor Manufacturing Co. Ltd
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