N-type window layer for a thin film solar cell and method of mak

Details N-type window layer for a thin film solar cell and method of mak N-type window layer for a thin film solar cell and method of mak

1997-05-09

2000-03-21

Nguyen, Nam

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136262, 136264, 136252, 438 85, 438 95, 20419229, H01L 31032, H01L 310272

Patent

active

06040521&

ABSTRACT:
Transparent conductive ZnO films are formed at a high rate, are equal in performance to those formed by MOCVD and have a large area, while the influence of sputtering bombardment is reduced. A method for producing transparent conductive ZnO films is used to produce the window layer of a CIGS thin-film solar cell. A first conductive film functioning as an interface-protective film is formed on a high-resistance-buffer (interfacial) layer by low-output (100 W or lower) RF sputtering using a ZnO target while reducing sputtering bombardment. Second and third conductive films for the window layer are then formed by DC magnetron sputtering in steps using a ZnO--Al target in each step.

REFERENCES:
patent: 4611091 (1986-09-01), Choudary et al.
patent: 4612411 (1986-09-01), Wieting et al.
patent: 4798660 (1989-01-01), Ermer et al.
patent: 4915745 (1990-04-01), Pollock et al.
patent: 5078804 (1992-01-01), Chen et al.
patent: 5436204 (1995-07-01), Albin et al.
patent: 5474939 (1995-12-01), Pollock et al.
patent: B14915745 (1992-04-01), Pollock et al.
M. A. Contreras, et al., "High Efficiency Cu(IN,Ga)Se.sub.2 -Based Solar Cells: Processing of Novel Absorber Structures", World Conference on Photovoltaic Energy, Waikoloa, Dec. 5-9, 1994, vol. 1, No. Conf. 1, Dec. 5, 1994, pp. 68-75, Institute of Electrical and Electronics Engineers.
J. Kessler, et al; Front Contact Optimization for Cu(In,Ga)Se.sub.2 (SUB)Modules 25th PVSC; May 13-17, 1996; Wash., D.C.; pp. 885-888.
K. Ellmer, et al; ZnO/ZnO:Al Window and Contact Layer for Thin Film Solar Cells: High Rate Deposition By Simultaneous RF and DC Magnetron Sputtering; 25th PVSC; May 13-17, 1996; Wash., D .C.; pp. 881-884.
M. Ruckh, et al; Applications of ZnO IN Cu(In,Ga)Se.sub.2 Solar Cells; 25th PVSC; May 13-17, 1996; Washington, D.C.; pp. 825-828.
Wen S. Chen, et al.; Thin Film CuInGaSe.sub.2 Cell Development; 23rd PVSC, 1993; pp. 422-425.
J. Kessler, et al.; Front Contact Optimization for Cu(In,Ga)Se2 (SUB)Modules 25th PVSC; Wash., D.C.; pp. 885-888, May 13, 1996.
Wen S. Chen, et al.; Thin Film CuInGaSe2 Cell Development; 23rd PVSC; pp. 422-425, Dec. 9, 1993.

Affiliated with

Also associated with

Rating

N-type window layer for a thin film solar cell and method of mak does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with N-type window layer for a thin film solar cell and method of mak, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and N-type window layer for a thin film solar cell and method of mak will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-731983