N-type semiconductor diamond and its fabrication method

Details N-type semiconductor diamond and its fabrication method N-type semiconductor diamond and its fabrication method

2006-06-20

2006-06-20

Norton, Nadine G. (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S092000, C117S094000, C117S103000, C117S929000, C117S902000

Reexamination Certificate

active

07063742

ABSTRACT:
A substrate is polished and made an inclined substrate, which is exposed to a hydrogen plasma and is thereby smoothened. The substrate is then heated controlledly until it surface temperature reaches 830° C. Meanwhile, a gas mixture of 1% methane, 50 ppm hydrogen sulfide and hydrogen is introduced in a tubular reaction vessel to flow therethrough at 200 ml/min, where microwave plasma is excited to cause n-type semiconductor diamond to epitaxially grow on the substrate. An ion doped n-type semiconductor is thus formed that has a single donor level of an activation energy at 0.38 eV and is high in mobility and of high quality.

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