N-type ohmic electrode for n-type group III nitride...

Details N-type ohmic electrode for n-type group III nitride... N-type ohmic electrode for n-type group III nitride...

2004-07-16

2009-10-06

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

Plural non-isolated transistor structures in same structure

C257S605000, C257S657000, C361S298400, C029S740000

Reexamination Certificate

active

07598593

ABSTRACT:
The present invention provides a constitution of n-type ohmic electrode suitable for n-type group III nitride semiconductor, and a forming method thereof for providing low contact resistivity. The n-type ohmic electrode is provided to comprise an alloy of aluminum and lanthanum or comprises lanthanum at the junction interface with the n-type group III nitride semiconductor. The method comprising forming a lanthanum-aluminum alloy layer at 300° C. or less to form an n-type ohmic electrode enriched in lanthanum at the junction interface.

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