N-type higfet and method

Details N-type higfet and method N-type higfet and method

1996-03-15

1997-12-02

Dutton, Brian

Fishing, trapping, and vermin destroying

437 41, 437 80, 437133, H01L 21265, H01L 2100, H01L 2120, H01L 2130

Patent

active

056935447

ABSTRACT:
An N-type HIGFET (10) utilizes two etch layers (17,18) to form a gate insulator (16) to be shorter that the gate electrode (21). This T-shaped gate structure facilitates forming source (23) and drain (24) regions that are separated from the gate insulator (16) by a distance (22) in order to reduce leakage current and increase the breakdown voltage.

REFERENCES:
patent: 4746627 (1988-05-01), Zuleeg
patent: 4965645 (1990-10-01), Solomon
patent: 5116774 (1992-05-01), Huang et al.

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