N-type group III nitride semiconductor stacked layer structure

Details N-type group III nitride semiconductor stacked layer structure N-type group III nitride semiconductor stacked layer structure

2005-09-13

2009-11-03

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S015000, C257S018000, C257S021000, C257S103000, C257SE33008, C257SE33012, C257SE33025, C257SE33030, C257SE33033, C257SE33034

Reexamination Certificate

active

07612363

ABSTRACT:
An n-type Group III nitride semiconductor stacked layer structure including a first n-type layer which includes a layer containing n-type impurity atoms at a high concentration and a layer containing n-type impurity atoms at a low concentration, a second n-type layer containing n-type impurity atoms at an average concentration smaller than that of the first n-type layer, the second n-type layer neighboring the layer containing n-type impurity atoms at a low concentration in the first n-type layer.

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