N-type doping of an electron transport material and methods...

Compositions – Electrically conductive or emissive compositions – Metal compound containing

Reexamination Certificate

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C257S086000, C257S431000

Reexamination Certificate

active

07981328

ABSTRACT:
Electron transport material and methods of N-type doping the same are provided.

REFERENCES:
patent: 2003/0003300 (2003-01-01), Korgel et al.
patent: 2006/0155106 (2006-07-01), Roberts et al.
patent: 2006/0210897 (2006-09-01), Jubran et al.
patent: WO2005123737 (2005-12-01), None
Barlow, S., et al. “Some Georgia Tech Activities Relevant to Organic Solar Cells.” PowerPoint Presentation. Feb. 8, 2007 at the Organic Solar Cell Consortium at the University of Wollongong, New South Wales, Australia.
Chan, C.K., et al. “N-type doping of an electron-transport material by controlled gas-phase incorporation of cobaltocene.” Chemical Physics Letters 2006; 431:67-71.
Kahn, A. “N- and p-doping of organic molecular films: improvement of charge carrier injection.” PowerPoint Presentation. Jul. 19, 2006 presented at the Weizmann Institute of Science, Rehovt, Israel.
Kahn, A. “N-doping of organic molecular semiconductors: the challenge of reducing law electron affinity materials.” PowerPoint Presentation. May 8, 2007 presented at First Solvay-COPE Symposium on Organic Electronics at the Georgia Institute of Technology, Atlanta, GA.
Domrachev et al, “The Structure of Fullerene Films and Their Metallocene Doping”, Russian Chemical Bulletin,1994, vol. 43(8), p. 1305-1309.

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