N-type amorphous semiconductor materials

Details N-type amorphous semiconductor materials N-type amorphous semiconductor materials

1973-07-02

1976-09-28

Douglas, Winston A.

Compositions

Electrically conductive or emissive compositions

Metal compound containing

106 47R, H01B 106, C03C 312, C03C 330

Patent

active

039830764

ABSTRACT:
New amorphous semiconductor and chalcogenide compositions are provided exhibiting n-conductivity characteristics. Chalcogenide compositions, which are normally formed as p-type materials, are converted to n-type materials or are initially formed as n-type materials, by elevating the temperatures thereof below their crystallization temperature and substantially in excess of the temperature at which its conductivity at room temperature versus annealing temperature curve decreases sharply from a relatively high constant value and allowing the same to cool to room temperature.

REFERENCES:
patent: 3343972 (1967-09-01), Hilton et al.
patent: 3348045 (1967-10-01), Brau et al.
patent: 3360649 (1967-12-01), Brau et al.
patent: 3440068 (1969-04-01), Patterson et al.
patent: 3451794 (1969-06-01), Patterson
patent: 3511993 (1970-12-01), Patterson
patent: 3709813 (1973-01-01), Johnson et al.
patent: 3771073 (1973-11-01), Krause
patent: 3773529 (1973-11-01), Schottmiller
patent: 3820968 (1974-06-01), Haisty
Hilton et al.--"Non-Oxide IVA-VA-VIA Chalcogenide Glasses", Parts I, II, III--Phys. & Chem. of Glasses, 7(4) Aug. 1966, pp. 105-126.

Affiliated with

Also associated with

Rating

N-type amorphous semiconductor materials does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with N-type amorphous semiconductor materials, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and N-type amorphous semiconductor materials will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2079848