N.sup.+ amorphous silicon thin film transistors for matrix addre

Details N.sup.+ amorphous silicon thin film transistors for matrix addre N.sup.+ amorphous silicon thin film transistors for matrix addre

1985-08-02

1990-06-12

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 43, 437 50, 437181, 437187, 437192, 357 237, H01L 2978

Patent

active

049332961

ABSTRACT:
A thin film FET switching element, particularly useful in liquid crystal displays (LCDs) employs particular materials and is fabricated via a particular process to ensure chemical compatibility and the formation of good electrical contact to an amorphous silicon layer while also producing FETs with desirable electrical properties for LCDs. These materials include the use of titanium as a gate electrode material and the use of N.sup.+ amorphous silicon as a material to enhance electrical contact between molybdenum source and drain pads and an underlying layer of amorphous silicon. The process of the present invention provides enhanced fabrication yield and device performance.

REFERENCES:
patent: 3806365 (1974-04-01), Jacob
patent: 3967981 (1976-07-01), Yamazaki
patent: 4149307 (1979-04-01), Henderson
patent: 4365274 (1982-12-01), Takenouchi et al.
patent: 4558340 (1985-12-01), Schachter et al.
Murarka, "Refractory Silicides for Integrated Circuits", J. Vac. Sci. Technol., 17(4), Jul./Aug. 1980.
Rand, "Plasma-Promoted Deposition of Thin Inorganic Films", J. Vac. Sci. Technol., Mar./Apr. 1979.
Bare, "Etching Patterns in Amorphous Silicon", J. Vac. Sci. Technol., A4(2), Mar./Apr. 1986.
Ghandi, VLST Fabrication Principles, Silicon and Gallium Arsenide, John Wiley and Sons, New York, 1983, pp. 437-439, 504-510 and 524-525.
Colclaser, Microelectronics: Processing and Device Design, John Wiley and Sons, New York, 1980, pp. 110 and 111.
"Silicon TFTs for Flat Panel Displays", by F. Morin and M. LeContellec, Hewlett Packard Journal (date unknown).
"Amorphous-Silicon Thin-Film Metal-Oxide-Semiconductor Transistors", by Hiroshi Hayama and Masakiyo Matsumura, Applied Physics Letters, vol. 36, No. 9 (May 1980).
"Amorphous Silicon-Silicon Nitride Thin-Film Transistors", by M. J. Powel et al., Applied Physics Letters, vol. 38, No. 10 (May 1981).
"Application of Amorphous Silicon Field Effect Transistors in Addressable Liquid Crystal Display Panels", by A. J. Snell et al., Applied Physics, vol. 24, pp. 357-362 (1981).
"A TFT-Addressed Liquid Crystal Color Display", by M. Sugata et al. (Oct. 1983), Proceedings of the Third International Display Research Conference, Paper No. 53.
"Amorphous-Silicon TFT Array for LCD Addressing", by M. V. C. Stroomer, Electronic Letters, vol. 18, No. 20 (1982).
"High Resolution Transparent-Type a-Si TFT LDCs", by K. Suzuki et al., SID Digest (1983).
"Promise and Challenge of Thin-Film Silicon Approaches to Active Matrices", by A. I. Lakatos, 1982 International Display Research Conference, IEEE, pp. 146-151.
"Application of Amorphous Silicon Field Effect Transistors in Integrated Circuits", by A. J. Snell et al., Applied Physics, vol. A26, pp. 83-86.

Affiliated with

Also associated with

Rating

N.sup.+ amorphous silicon thin film transistors for matrix addre does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with N.sup.+ amorphous silicon thin film transistors for matrix addre, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and N.sup.+ amorphous silicon thin film transistors for matrix addre will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-617047