N+PP-PP-P+ Avalanche photodiode

Details N+PP-PP-P+ Avalanche photodiode N+PP-PP-P+ Avalanche photodiode

1980-08-20

1982-04-20

Larkins, William D.

357 13, 357 89, 357 91, H01L 21265, H01L 3110

Patent

active

043262112

ABSTRACT:
A radiation-sensitive semiconductor device includes a radiation-detecting avalanche diode which has a semiconductor layer structure made up of four layers of the same type conductivity. The fourth semiconductor layer is located above the third layer and has a higher doping concentration than that of the third layer. This fourth layer substantially improves the noise properties of the device, by a factor of about 2. The radiation-sensitive semiconductor device is manufactured by a method in which the first and third layers of the semiconductor layer structure are provided by epitaxial growth, while the second and fourth layers of the structure are provided by ion implantation. The structure and method of the invention are particularly useful in the manufacture of avalanche photodiodes with an improved noise factor.

REFERENCES:
patent: 3201664 (1965-08-01), Adam
patent: 3483441 (1969-12-01), Hofflinger
patent: 3574008 (1971-04-01), Rice
patent: 3886579 (1975-05-01), Ohuchi et al.
patent: 3904449 (1975-09-01), DiLorenzo et al.
patent: 4045252 (1977-08-01), Moutou
patent: 4083062 (1978-04-01), Ohuchi et al.
patent: 4127932 (1968-12-01), Hartman et al.
patent: 4129878 (1978-12-01), Webb
patent: 4142200 (1979-02-01), Mizushima et al.
Bollen et al, "The Avalanche Photodiode", Philips Technical Review, vol. 36, No. 7, pp. 205-210 (1976).
Webb et al, "Properties of Avalanche Photodiodes", RCA Review, vol. 35, pp. 234-278 (1974).

Affiliated with

Also associated with

Rating

N+PP-PP-P+ Avalanche photodiode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with N+PP-PP-P+ Avalanche photodiode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and N+PP-PP-P+ Avalanche photodiode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1265582