Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2011-05-24
2011-05-24
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257SE29249
Reexamination Certificate
active
07948011
ABSTRACT:
A novel enhancement mode field effect transistor (FET), such as a High Electron Mobility Transistors (HEMT), has an N-polar surface uses polarization fields to reduce the electron population under the gate in the N-polar orientation, has improved dispersion suppression, and low gate leakage.
REFERENCES:
patent: 5290393 (1994-03-01), Nakamura
patent: 6064082 (2000-05-01), Kawai et al.
patent: 6133593 (2000-10-01), Boos et al.
patent: 6624452 (2003-09-01), Yu et al.
patent: 6649287 (2003-11-01), Weeks et al.
patent: 2001/0015437 (2001-08-01), Ishii et al.
patent: 2001/0020700 (2001-09-01), Inoue et al.
patent: 2003/0006407 (2003-01-01), Taylor
patent: 2004/0099888 (2004-05-01), Sriram
patent: 2005/0051796 (2005-03-01), Parikh et al.
PCT/US2006/36377 International Search Report dated May 15, 2008 (Pat. No. 6,046,082 which was listed in the Search Report had transposed numbers per PCT Officer Lynne Gurley. Should be Pat. No. 6,064,082).
Supplementary European Search Report, Application No. EP 06 85 1277, dated May 14, 2009.
Chini et al., “Fabrication and characterization of n-face AIGaN/GaN/AIGan HEMTs,” Device Research Conference Digest, IEEE, Jun. 20, 2005, vol. 1, pp. 63-64.
Morkoc et al., “Polarization effects in nitride semiconductor device structures and performance of modulation doped field effect transistors,” Solid State Electronics, Oct. 1, 1999, vol. 43, No. 10, pp. 1909-1927.
Zandler et al., “Pyroelectronics: novel device concepts based on nitride interfaces,” Journal of Vacuum Science & Technology B, Jul. 1, 1999, vol. 17, No. 4, pp. 1617-1621.
Supplementary European Search Report, Application No. EP 07838270, dated Jun. 22, 2010.
Burnham, S. et al., “Mg doped GaN using a valved, thermally energetic source: enhanced incorporation, and control,” Journal of Crystal Growth 279 (2005) 26-30.
Lebedev, V. et al., “Hexagonal AIN films grown on nominal and off-axis Si(0 0 1) substrates,” Journal of Crystal Growth 230 (2001) 426-431.
Mita, S. et al., “Polarity control of GaN films grown by metal organic chemical vapor deposition on (0001) sapphire substrates,” Mater. Res. Soc. Symp. Proc., vol. 831, 2005, pp. E3.20.1-E3.20.6.
Rajan, S. et al., “Growth and electrical characterization of N-face AIGaN/GaN hetereostructures,” Japanese Journal of Applied Physics, vol. 44, No. 49, 2005, pp. L1478-L1480.
Shen, X. et al., “Electrical properties of AIGaN/GaN hetereostructures grown on vicinal sapphire (0001) substrates by molecular beam epitaxy,” Applied Physics Letters 89, 2006, pp. 171906-1-171906-3.
Yamaguchi, K. et al., “Influence of AIN growth conditions on the polarity of GaN grown on AIN/Si(111) by metalorganic molecular beam epitaxy,” Japanese Journal of Applied Physics, vol. 43, No. 2A, 2004, pp. L151-L153.
Zauner, A. et al., “Homo-epitaxial growth on misoriented GaN substrates by MOCVD,” Mat. Res. Soc. Symp., vol. 595, 2000, pp. W6.3.1-W6.3.6.
Mishra Umesh K.
Rajan Siddharth
Speck James S.
Suh Chang Soo
Gates & Cooper LLP
Smith Bradley K
The Regents of the University of California
LandOfFree
N-polar aluminum gallium nitride/gallium nitride... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with N-polar aluminum gallium nitride/gallium nitride..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and N-polar aluminum gallium nitride/gallium nitride... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2696770