Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2005-04-20
2009-08-25
Phung, Anh (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257SE51005, C257SE51006, C257SE51050
Reexamination Certificate
active
07579619
ABSTRACT:
A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted arylalkyl moiety. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
REFERENCES:
patent: 4468444 (1984-08-01), Contois
patent: 4611385 (1986-09-01), Forrest et al.
patent: 5347144 (1994-09-01), Garnier et al.
patent: 6127076 (2000-10-01), Ishigami et al.
patent: 6387727 (2002-05-01), Katz et al.
patent: 2002/0164835 (2002-11-01), Dimitrakopoulos et al.
patent: 2005/0142472 (2005-06-01), Sekido et al.
patent: 2005/0176970 (2005-08-01), Marks et al.
patent: 0 031 065 (1979-12-01), None
patent: 85/04985 (1985-11-01), None
Theo J. Dingemans, et al., “Wholly Aromatic Ether-imides; Potential Materials for n-Type Semiconductors,” Chem. Mater. 2004, 16, 966-974.
Freeman Diane C.
Nelson Shelby F.
Shukla Deepak
Eastman Kodak Company
Lulis Michael
Phung Anh
Tucker J. Lanny
LandOfFree
N,N′-di(arylalkyl)-substituted naphthalene-based... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with N,N′-di(arylalkyl)-substituted naphthalene-based..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and N,N′-di(arylalkyl)-substituted naphthalene-based... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4063291