Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – To compound semiconductor
Patent
1995-04-21
1996-05-14
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
To compound semiconductor
257485, 257486, 437176, 437177, H01L 2947
Patent
active
055170544
ABSTRACT:
A new Schottky diode structure, Pt/Al
-InP, is disclosed in the present invention. The thickness of Al layer of the Schottky diode structure is restricted in a range of about 80-120 .ANG.. This structure gives a barrier height of 0.74 eV and an ideality factor of 1.11 after it was annealed at 300.degree. C. for 10 min. This is due to the formation of Aluminum-oxide, as the interfacial layer to improve barrier height. A method of preparing this Schottky diode structure is also disclosed in the present invention.
REFERENCES:
patent: 4521800 (1985-06-01), Howe
patent: 4990988 (1991-02-01), Lin
J. R. Waldrop, S. P. Kowalczyk, and R. W. Grant, "Summary Abstract: Fermi-level pinning energy and chemistry at InP(100) interfaces", J. Vac. Sci. Technol. B 1(3), Sep. 1983.
J. Dunn and G. B. Stringfellow, "Ag/Al Schottky Contacts on n-InP", Journal of Electronic Materials, vol. 17, No. 2, Jan. 1988.
Z. Q. Shi, R. L. Wallace, and W. A. Anderson, "High-barrier height Schottky diodes on N-InP by deposition on cooled substrates", Appl. Phys. Lett. 59 (4), 22 Jul. 1991.
Huang Wen C.
Lee Chung L.
Lei Tan F.
Jackson, Jr. Jerome
Kelley Nathan K.
National Science Council
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