N-INP Schottky diode structure and a method of making the same

Details N-INP Schottky diode structure and a method of making the same N-INP Schottky diode structure and a method of making the same

1996-03-07

1997-03-11

Jackson, Jerome

Fishing, trapping, and vermin destroying

437175, 437179, 257472, H01L 2144

Patent

active

056100981

ABSTRACT:
A new Schottky diode structure, Pt/Al
-InP, is disclosed in the present invention. The thickness of Al layer of the Schottky diode structure is restricted in a range of about 80-120 .ANG.. This structure gives a barrier height of 0.74 eV and an ideality factor of 1.11 after it was annealed at 300.degree. C. for 10 min. This is due to the formation of Aluminum-oxide, as the interfacial layer to improve barrier height. A method of preparing this Schottky diode structure is also disclosed in the present invention.

REFERENCES:
patent: 4170818 (1976-10-01), Tobey, Jr. et al.
patent: 4990988 (1991-02-01), Lin
J. R. Waldrop, S. P. Kowalczyk, and R. W. Grant, "Summary Abstract: Fermi-level pinning energy and chemistry at InP(100) interfaces", J. Vac. Sci. Technol. B 1(3), Jul.-Sep. 1983.
J. Dunn and G. B. Stringfellow, "Ag/Al Schottky Contacts on n-InP", Journal of Electronic Materials, vol. 17, No. 2, 1988.
Z. Q. Shi, R. L. Wallace, and W. A. Anderson, "High-barrier height Schottky diodes on N-InP by deposition on cooled susbstrates", Appl. Phys. Lett. 59(4), 22 Jul. 1991.

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