N-face high electron mobility transistors with low buffer...

Details N-face high electron mobility transistors with low buffer... N-face high electron mobility transistors with low buffer...

2011-05-03

2011-05-03

Garber, Charles D (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S183000, C257S201000, C257SE21403, C257SE21112, C257SE29081, C438S285000, C438S478000

Reexamination Certificate

active

07935985

ABSTRACT:
A method for fabricating nitrogen-face (N-face) nitride-based electronic devices with low buffer leakage, comprising isolating a buffer from a substrate with an AlGaInN nucleation layer to suppress impurity incorporation from the substrate into the buffer. A method for fabricating N-face nitride-based electronic devices with low parasitic resistance and high breakdown, comprising capping a device structure with a conductive layer to provide extremely low access and/or contact resistances, is also disclosed.

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