Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2011-01-18
2011-01-18
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S013000, C257S022000, C257S079000, C257S103000, C257S769000
Reexamination Certificate
active
07872274
ABSTRACT:
An object of the present invention is to obtain greater reduction in resistance between an n-electrode and an n-type layer made of a Group III nitride compound semiconductor. According to the present invention, the n-electrode is formed with a first electrode material made of at least one member selected from the group consisting of vanadium (V), titanium (Ti), zirconium (Zr) and tungsten (W), a second electrode material made of at least one member selected from the group consisting of palladium (Pd), platinum (Pt), gold (Au), silver (Ag) and copper (Cu), and a third electrode material made of at least one member selected from the group consisting of aluminum (Al), silicon (Si) and germanium (Ge).
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Koide Yasuo
Murai Shunsuke
Murakami Masanori
Shibata Naoki
McGinn IP Law Group PLLC
Nadav Ori
Toyoda Gosei Co,., Ltd.
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