N Contact compensation technique

Details N Contact compensation technique N Contact compensation technique

1984-04-05

1985-11-19

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 29576W, 29580, 29591, 148 15, 148187, 148188, 148DIG83, 357 44, 357 65, H01L 21265, H01L 2128

Patent

active

045533156

ABSTRACT:
The contact for N channel devices in a CMOS process is formed by ion implanting N-type impurities through contact apertures in the dielectric layer to a depth less than the source and drain regions and a layer of conductive material is applied without intermediate etching and delineated.

REFERENCES:
patent: 3984822 (1976-10-01), Simko et al.
patent: 4084311 (1978-05-01), Yasuoka et al.
patent: 4109371 (1978-08-01), Shibata et al.
patent: 4160683 (1979-07-01), Roche
patent: 4161417 (1979-07-01), Yin et al.
patent: 4433468 (1984-02-01), Kawamata
patent: 4463492 (1984-08-01), Maeguchi

Affiliated with

Also associated with

Rating

N Contact compensation technique does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with N Contact compensation technique, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and N Contact compensation technique will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-77093