Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2005-01-17
2009-12-29
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C438S099000
Reexamination Certificate
active
07638793
ABSTRACT:
An n-channel or ambipolar field-effect transistor including an organic semiconductive layer having an electron affinity EAsemicond; and an organic gate dielectric layer forming an interface with the semiconductive layer; characterized in that the bulk concentration of trapping groups in the gate dielectric layer is less than 1018cm−3, where a trapping group is a group having (i) an electron affinity EAXgreater than or equal to EAsemicondand/or (ii) a reactive electron affinity EArxngreater than or equal to (EAsemicond.−2 eV).
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Chua Lay-Lay
Friend Richard Henry
Ho Peter Kian-Hoon
Cambridge Enterprise Ltd
Jahan Bilkis
Louie Wai-Sing
Sughrue & Mion, PLLC
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