Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-05-17
2009-02-24
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S059000, C257S072000, C257SE27132
Reexamination Certificate
active
07495258
ABSTRACT:
An N-channel TFT and OLED display apparatus and electronic device using the same are disclosed. The N-channel TFT comprises a a substrate; an active layer on the substrate, wherein the active layer comprises an N type source region and an N type drain region; a gate dielectric layer on the active layer; and a gate region on the gate dielectric layer. At least a part of the highly-doped source region is located under the gate region, and at least a part of the lightly-doped drain region is located under the gate region.
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Liu & Liu
Mandala Victor A
TPO Displays Corp.
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