N-channel negative charge pump

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

Reexamination Certificate

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Reexamination Certificate

active

07342438

ABSTRACT:
Described herein is a negative charge pump architecture that utilizes a triple-well, no body effect NMOS circuitry. The negative charge pump utilizes triple-well N channel high mobility transistor devices with the deep N wells grounded. The parasitic bipolar transistors may be avoided such that the charge transfer occurs mainly in the channel of the transistor device. With the increased mobility of the N channel devices, negative charge pumps using N channel transistors may be more efficient and may allow more current to flow than a comparable P channel charge pump.

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U.S. Appl. No. 11/266,218, filed Nov. 4, 2005, Ahmed et al.

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