N-channel MOS transistors having source/drain regions with germa

Details N-channel MOS transistors having source/drain regions with germa N-channel MOS transistors having source/drain regions with germa

1989-03-06

1990-05-22

James, Andrew J.

357 233, 357 239, 357 41, 357 63, H01L 2978, H01L 2702, H01L 29167

Patent

active

049281569

ABSTRACT:
Metal-oxide-semiconductor (MOS) transistors with n-type source/drain regions also having germanium-doped regions in or near the source/drains. The presence of germanium near or at the location of phosphorus in graded source drains (GSDs), lightly doped drains (LDDs) and double diffused drains (DDDs) gives a better profile of the drain region with a reduced junction depth than that obtainable with phosphorus or particularly phosphorus and arsenic together. Good grading of the drain junction to avoid hot carrier instability or hot carrier injection problems is obtained along with shallow source junctions, which minimizes lateral dopant diffusion and decreases the distance between n.sup.- and n.sup.+ regions in GSDs and LDDs.

REFERENCES:
patent: 4137103 (1979-01-01), Mader et al.
patent: 4683645 (1987-08-01), Naguib et al.
patent: 4728619 (1988-03-01), Pfiester et al.

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