N-channel MOS transistors having source/drain regions with germa

Details N-channel MOS transistors having source/drain regions with germa N-channel MOS transistors having source/drain regions with germa

1987-07-13

1989-06-06

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437027, 437044, H01L 21265

Patent

active

048371734

ABSTRACT:
Metal-oxide-semiconductor (MOS) transistors with n-type source/drain regions also having germanium-doped regions in or near the source/drains. The presence of germanium near or at the location of phosphorus in graded source drains (GSDs), lightly doped drains (LDDs) and double diffused drains (DDDs) gives a better profile of the drain region with a reduced junction depth than that obtainable with phosphorus or particularly phosphorus and arsenic together. Good grading of the drain junction to avoid hot carrier instability or hot carrier injection problems is obtained along with shallow source junctions, which minimizes lateral dopant diffusion and decreases the distance between n- and n+ regions in GSDs and LDDs.

REFERENCES:
patent: 4111719 (1978-09-01), Mader et al.
patent: 4318216 (1982-03-01), Hsu
patent: 4332627 (1982-06-01), Schmitt et al.
patent: 4603471 (1986-08-01), Strain
patent: 4617066 (1986-10-01), Vasudev
"Bipolar Transistors with a High Mobility Base", Research Disclosure, (Nov. 1987), p. 28375.

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