N-channel memory field effect transistor

Details N-channel memory field effect transistor N-channel memory field effect transistor

1977-09-19

1979-04-03

Wojciechowicz, Edward J.

357 13, 357 41, 357 45, 357 59, H01L 2978

Patent

active

041480449

ABSTRACT:
N-channel memory FET has only one erasing projection ("tongue") on the floating memory gate. The tongue covers a special transfer region in the substrate, insulated from drain and source. The erasing of the memory gate occurs via this transfer region. There is separation of transfer region potential and source/drain potential.
Applicable for erasible-programmable read only memory chips and, in particular, for program memories of miniature calculators.

REFERENCES:
patent: 3881180 (1975-04-01), Gosney
patent: 3919711 (1975-11-01), Chou
patent: 4019197 (1977-04-01), Lohstroh et al.

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