N-channel field effect transistor including a thin-film fulleren

Details N-channel field effect transistor including a thin-film fulleren N-channel field effect transistor including a thin-film fulleren

1996-09-05

1997-12-02

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257 57, H01L 2714, H01L 3100, H01L 2904, H01L 31036

Patent

active

056939779

ABSTRACT:
An n-channel field-effect transistor is fabricated utilizing a thin-film fullerene (for example, C.sub.60) as the active element. The fullerene film is deposited onto a device substrate in an ultra-high-vacuum chamber and is thus substantially oxygen-free. Subsequently, while still in the chamber, the fullerene film is encapsulated with a material that is impervious to oxygen.

REFERENCES:
patent: 5009958 (1991-04-01), Yamashira
patent: 5126283 (1992-06-01), Pintchovski et al.
patent: 5171373 (1992-12-01), Hebard et al.
J. Kastner et al, "Fullerene Field-Effect Transistors", 1993, Springer Series in Solid-State Sciences, vol. 113, edited by H. Kuzmany et al, pp. 512-515.

Affiliated with

Also associated with

Rating

N-channel field effect transistor including a thin-film fulleren does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with N-channel field effect transistor including a thin-film fulleren, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and N-channel field effect transistor including a thin-film fulleren will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-804204