Fishing – trapping – and vermin destroying
Patent
1993-11-12
1994-12-27
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 52, 437 60, 437919, H01L 21265, H01L 2170, H01L 2700
Patent
active
053765664
ABSTRACT:
An improved N-channel field-effect transistor is fabricated by performing a vertical N- implant, aligned to the vertical edges of the gate electrode, in both the source and drain regions of the device. In a first embodiment of the invention intended for use in dynamic random access memory access devices, a dielectric spacer is then formed on the sidewall of the gate electrode adjacent the drain (i.e., the regions which functions as the bitline contact in a DRAM memory cell). A vertical N+ implant, aligned to the exposed vertical edge of that spacer, is performed, in addition to an oblique implant of an N-type impurity. The oblique implant dosage is significantly greater than the N- implant dosage, but significantly less than the N+ implant dosage. In a second embodiment of the invention intended for use in applications where the transistor has no capacitive storage node, spacers are formed on both sidewalls of the gate electrode and the N+ implant, as well as the oblique N-type implant are performed in both the source and drain regions of the device. In preferred embodiments of the invention, phosphorus is utilized as the N- implant impurity, while arsenic is utilized for the other two N-type implants. The oblique implant provides not only reduced electric field strength in the channel region, but also reduced series resistance.
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A New Submicron MOSFET with LATID (Large-Tilt Angle Implanted Drain) Structure Takashi Hori, Kazumi Kurimoto, Toshiki Yabu, and Genshu Fuse pp. 15 & 16.
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Drain-Structure Design for Reduced Band-to Band and Band-to-Defect Tunneling Leakage. Takashi Hori. pp. 69-70, 1990.
SCC (Scurrounded Capacitor Cell) Structure for DRAM. G. Fuse, K. Tateiwa, S. Odanaka, T. Yamada, I. Nakao, H. Shimoda, O. Shippou, M. Fukumoto, J. Yasui, Y. Naito, and T. Ohzone. pp. 11-14, 1987.
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Deep-Submicrometer Large-Angle-Tilt Implanted Drain (LATID) Technology Takashi Hori, Junji Hirase, Yoshinori Odake & Takatoshi Yasui, pp. 2313-2324, 1992.
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Fox III Angus C.
Gurley Lynn A.
Hearn Brian E.
Micron Semiconductor Inc.
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