Multiwavelength laterally-injecting-type lasers

Details Multiwavelength laterally-injecting-type lasers Multiwavelength laterally-injecting-type lasers

1992-12-21

1994-06-07

Gonzalez, Frank

Coherent light generators

Particular beam control device

Producing plural wavelength output

372 45, 372 50, H01S 310

Patent

active

053196554

ABSTRACT:
Multiwavelength laser sources that are precisely aligned relative to each other and suitable, for instance, for multistation, multicolor ROS. The device is made by growing on a semiconductor substrate a set of epitaxial layers in a laterally injecting laser configuration with progressively narrower bandgap quantum well active regions (and therefore progressively longer wavelength operation) towards the surface of the crystal. Selective etching can then be used to remove all quantum wells with emissions shorter than the ultimately desired wavelength in a given cavity. This approach can be applied to three different types of laser structures; conventional edge emitting lasers, grating surface emitting lasers, and vertical surface emitting lasers. Also described is a vertical cavity, surface-emitting laser with lateral injection employing a reflector structure comprised of a III-V semiconductor layer beneath the active region, and a reflecting mirror above the active region.

REFERENCES:
patent: 4476563 (1984-10-01), Van Ruyven
patent: 4786918 (1988-11-01), Thornton et al.
patent: 5038185 (1991-08-01), Thornton
patent: 5164949 (1992-11-01), Ackley et al.
patent: 5216443 (1993-06-01), Thornton et al.
patent: 5223723 (1993-06-01), Luryi
R. L. Thornton, "Integrated Optoelectronics for Communication and Processing", SPIE, vol. 1582, Sep. 3-4, 1991, Boston, Mass., pp. 194-205.

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