Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-11-09
1994-09-13
Limanek, Robert
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257192, 257 6, H01L 2980
Patent
active
053471415
ABSTRACT:
The present invention (or multi-terminal lateral hot-electron transistor, ET) is based on a high electron mobility (hot-electron) transistor with a split-gate arrangement similar to those used in quantum wave guide devices. In the present invention, the depletion below the split gate is used to form, and control, potential barriers between the source and drain contacts. The devices, according to the present invention, exhibit pronounced SNDC which is controlled by the gate bias.
REFERENCES:
patent: 4903092 (1990-02-01), Luryi et al.
patent: 4942438 (1990-07-01), Miyamoto
patent: 5192986 (1993-03-01), Ando
Hess et al, Journal of Applied Physics 60, p. 3775, 1986.
Emanuel et al, Solid State Electronics 31, p. 589, 1988.
Berven Chris
Goodnick Stephen M.
Smith Doran D.
Wu Jong-Ching
Wybourne Martin N.
Anderson William H.
Limanek Robert
The United States of America as represented by the Secretary of
Zelenka Michael
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