Multistep tungsten CVD process with amorphization step

Details Multistep tungsten CVD process with amorphization step Multistep tungsten CVD process with amorphization step

1997-02-07

1998-09-08

King, Roy V.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427250, 4272557, 438656, 438675, B05D 512, H01L 2144

Patent

active

058042490

ABSTRACT:
A process of forming a tungsten contact plug, on an integrated circuit (IC), that is substantially free of seam formation is described. The process includes forming a dielectric layer on a surface of a substrate, forming a via in the dielectric layer, blanket depositing a first bulk layer of tungsten on the dielectric layer and partially filling the via, blanket depositing an amorphous or a microcrystalline layer of tungsten over the first bulk layer of tungsten such that growth of tungsten grains inside the via is effectively inhibited, and blanket depositing a second bulk layer of tungsten on the amorphous or microcrystalline layer.

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patent: 5668064 (1997-09-01), Park et al.
John E.J. Schmitz, "Chemical Vapor Deposition of Tungsten and Tungsten Silicides for VLSI/ULSI Applications", Noyes Publications, USA, 1992.
M. Iwasaki, H. Itoh, T. Katayama, K. Tsukamoto and Y. Akasaka, "Blanket CVD-W Formed by H.sub.2 Reduction of WF.sub.6 on Tin for Planar Interconnection"Mat.Res.Soc.Symp.Proc.VLSI V, 1990.
R.V.Joshi, E. Mehter, M. Chow, M. Ishaq, S. Kang, P. Geraghty and J. McInerney, "High Growth Rate CVD-W Process For Filling High Aspect Ration Sub-Micron Contacts/Lines" Mat.Res.Soc.Symp.Proc.VLSI V, 1990.
A. Sakamoto, H. Tamura, M. Yoshimaru and M. Ino, Proc. Appl. Phys. Soc., Japan, Fall Meeting, paper 28A-SZD-22, p. 670 (1990).
C.C. Tang and D. W. Hess, "Plasma-enhanced Chemical Vapor Deposition of B-tungsten, a Metastable Phase" Appl. Phys. Lett., v.45(6), p. 633 (1984).

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