Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1997-01-13
1998-10-20
Mottola, Steven
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330310, H03F 316, H03F 368
Patent
active
058252495
ABSTRACT:
In a multistage source follower amplifier having input and output terminals, an output source follower amplifier has an output drive transistor of a surface channel type and a load which is connected to the output drive transistor. An input source follower amplifier has an input drive transistor and a load which is connected to the input drive transistor. A middle source follower amplifier unit is located between the input and the output source follower amplifiers and comprises a middle drive transistor of a buried channel type and a middle load which is connected to the middle drive transistor. The input source follower amplifier, the middle source follower amplifier unit, and the output source follower amplifier are connected in cascade to one another between the input and the output terminals.
REFERENCES:
patent: 4668971 (1987-05-01), Hynecek
patent: 5192920 (1993-03-01), Nelson et al.
N. Mutoh et al., "New Low-Noise Output Amplifier for High-Definition CCD Image Sensor", IEEE Transactions on Electron Devices, vol. 38, No. 5, May 1991, pp. 1048-1051.
N. Mutoh et al., "New Low Noise Output Amplifier for High Definition CCD Image Sensor," 1989 IEEE, Mar. 1989, pp. 7.5.1 -7.5.4.
D. Sauer et al., "A CCD Comb Filter IC for TV Receivers," 1980 IEEE International Solid-State Circuits Conference, Feb. 1980, pp. 32-33 and 258.
Mottola Steven
NEC Corporation
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