Multiquantum-well semiconductor laser

Details Multiquantum-well semiconductor laser Multiquantum-well semiconductor laser

1997-01-16

1998-04-07

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

257 17, H01S 318

Patent

active

057373531

ABSTRACT:
A multiquantum-well semiconductor laser having a long wavelength, for use in optical communication systems, comprises an active region including a plurality of quantum-well layers each made of InGaAs or InGaAsP, and a plurality of barrier laminates each made of InGaAsP having a bandgap wider than that of the quantum-well layers. Each barrier laminate includes three barrier layers of different compositions of InGaAsP having different bandgaps. Each barrier laminate has a thickness such that the wave functions of carriers in adjacent quantum-well layers do not overlap each other, while carriers supplied to the active region can be effectively injected into the quantum-well layers, thereby obtaining a low threshold current and a high slope efficiency.

REFERENCES:
patent: 4671830 (1987-06-01), Burnham
patent: 4882734 (1989-11-01), Scifres et al.
patent: 5061970 (1991-10-01), Goronkin
patent: 5319657 (1994-06-01), Otsuka et al.
Casey, Jr. H.C. and Panish, M.B. Heterostructure Lasers Part B Academic Press 1978 (No month available).

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