Multiquantum barrier structure and semiconductor laser diode

Details Multiquantum barrier structure and semiconductor laser diode Multiquantum barrier structure and semiconductor laser diode

1994-11-17

1996-08-06

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

055441874

ABSTRACT:
A multiquantum barrier (MQB) structure includes a first superlattice layer and a second superlattice layer disposed continuously with the first superlattice layer. The first superlattice layer includes well layers having the same thickness and barrier layers having the same thickness, the well layers and barrier layers being alternatingly laminated. The second superlattice layer includes well layers having the same thickness, the well and barrier layers being alternatingly laminated. The second superlattice layer has a high electron reflectivity in an electron energy region where the electron reflectivity of the second first superlattice structure is low. Therefore, the high reflectivity of the second superlattice layer compensates for the low reflectivity of the first superlattice layer whereby a high electron reflectivity is maintained in the MQB structure.

REFERENCES:
patent: 5362974 (1994-11-01), Irikawa et al.
patent: 5425041 (1995-06-01), Seko et al.

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