Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1995-04-17
1998-08-04
Wallace, Valencia Martin
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 17, 257 18, 257189, 257190, H01L 2906, H01L 310328
Patent
active
057897603
ABSTRACT:
There is provided a semiconductor device comprising a Schottky junction having a very low leakage current and a high forward voltage. The device comprises a Schottky junction realized by a semiconductor 4 and a metal 6 and a multiquantum barrier structure 5 disposed on the interface of said semiconductor 4 and said metal 6 and having an effect of reflecting enhancement of the incident and reflected waves!.
REFERENCES:
patent: 5034794 (1991-07-01), Murotani
patent: 5053843 (1991-10-01), Choudhury et al.
patent: 5096846 (1992-03-01), Randall
patent: 5105248 (1992-04-01), Burke et al.
patent: 5208695 (1993-05-01), Dutta
Fritz et al., "Novel reflectance modulator employing an InGaAs/AlGaAs strained layer super lattice Fabry-Perot cavity with unstrained InGaAs/InAlAs mirrors", Appl. Phys. Lett. vol. 58, No. 15, 15 Apr. 1991.
Iga, K. et al. Electron. Lett. vol. 22, 1008 (1986).
Morgan, D.V. et al. Electron. Lett. vol. 14, 737 (1978).
Iga Kenichi
Irikawa Michinori
Martin Wallace Valencia
The Furukawa Electric Co. Ltd.
LandOfFree
Multiquantum barrier Schottky junction device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multiquantum barrier Schottky junction device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multiquantum barrier Schottky junction device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1179821