Multiquantum barrier laser having high electron and hole reflect

Details Multiquantum barrier laser having high electron and hole reflect Multiquantum barrier laser having high electron and hole reflect

1994-03-17

1995-06-13

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

054250412

ABSTRACT:
It is an object of the present invention to provide a highly efficient semiconductor laser unit having excellent temperature characteristics, in which electrons or holes are suppressed from overflowing from the active layer to the cladding layers while the threshold of current density is maintained low. The present invention is to provide a semiconductor laser unit fundamentally composed of an active layer and cladding layers in which the active layer is interposed between the cladding layers the semiconductor laser unit comprising: a multiquantum barrier layer including well layers and barrier layers disposed between the active layer and the cladding layers or disposed in the cladding layers close to the active layer, wherein the well and barrier layers have a high reflectivity with respect to the electrons and holes at a position close to .GAMMA.-point in the reciprocal lattice space, and also the well and barrier layers have a high reflectivity with respect to the electrons and holes at a position close to at least one of the primary symmetrical points.

REFERENCES:
patent: 5319660 (1994-06-01), Chen et al.
"Electronics Letters", 11th Sep. 1986, vol. 22, No. 19, pp. 1008-1009.
"Japanese Journal of Applied Physics", vol. 29, No. 11, 11-90, p. L1977-1980.
IEEE Journal of Quantum Electronics, vol. 28, No. 10, Oct. 10, 1992 pp. 1977-1982.
Arimoto et al., "Experimental Verification Concerning MQB Effect of AlGaInP visible radiation laser".
Takagi et al., "Design of Multiquantum Barrier (MQB) and Experimental Verification of Reflecting Effect of Electronic Waves" Dec. 1991.

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