Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Patent
1993-05-10
1995-02-21
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
257777, 257778, 257724, H01L 23525, H01L 23538
Patent
active
053919173
ABSTRACT:
A function module using technology which allows conductive vias to be formed in a silicon substrate in order to fabricate three dimensional multifunctional processor system is described. A silicon or other semiconductor carrier having embedded active devices therein is used as a substrate for complex functional elements disposed on both sides thereof. The semiconductor substrate includes conductive vias formed therein which interconnect single chips or multichip modules disposed on either side thereof. Using drilling/plating techniques for wafer substrates electrically interconnected devices are placed on opposite sides of the substrate. Multichip modules (MCM) including the desired functions are then fabricated having input/output (I/Os) connection points which correspond to the vias formed in the substrate. This interconnection between the MCMs and the substrate may be accomplished by providing circuitized lines and connection pads on a dielectric layer, with conductive vias therein, which is subsequently placed on the active substrate. A dielectric layer having circuitized lines therein can then be extended outwardly from the module in order to provide electrical connection to input output devices, e.g. keyboard, display, or the like, as well as other system components, such as like multifunctional elements.
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IBM TDB, "Solder Bonding of Silicon Chips with Through Holes", vol. 18, No. 10, Mar. 1976, p. 3478.
Gilmour Richard J.
Schrottke Gustav
Brown Peter Toby
Hille Rolf
International Business Machines - Corporation
McBurney Mark E.
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