Multiple writes per a single erase for a nonvolatile memory

Details Multiple writes per a single erase for a nonvolatile memory Multiple writes per a single erase for a nonvolatile memory

1995-09-29

1998-09-29

Nelms, David C.

Static information storage and retrieval

Floating gate

Multiple values

36518533, 365218, G11C 1134

Patent

active

058154345

ABSTRACT:
A method for performing multiple writes before an erase to a nonvolatile memory cell is described. A first bit is stored at a first level of a nonvolatile memory cell. A second bit is stored at a second level of the nonvolatile memory cell. A method of erasing a nonvolatile memory cell is described. A level indicator that indicates the next level of the nonvolatile memory cell to write to is incremented. A method of reading a nonvolatile memory cell includes recalling a level indicator. The nonvolatile memory cell is then sensed at a level indicated by the level indicator to determine the state of the memory cell.

REFERENCES:
patent: 4202044 (1980-05-01), Beilstein, Jr. et al.
patent: 4287570 (1981-09-01), Stark
patent: 4388702 (1983-06-01), Sheppard
patent: 4415992 (1983-11-01), Adlhoch
patent: 4586163 (1986-04-01), Koike
patent: 4653023 (1987-03-01), Suzuki et al.
patent: 4701884 (1987-10-01), Aoki et al.
patent: 4709350 (1987-11-01), Nakagome et al.
patent: 4771404 (1988-09-01), Mano et al.
patent: 4964079 (1990-10-01), Devin
patent: 5012448 (1991-04-01), Matsuoka et al.
patent: 5043940 (1991-08-01), Harari
patent: 5163021 (1992-11-01), Mehrotra et al.
patent: 5172338 (1992-12-01), Mehrotra et al.
patent: 5262984 (1993-11-01), Noguchi et al.
patent: 5297148 (1994-03-01), Harari et al.
patent: 5351210 (1994-09-01), Saito
patent: 5422845 (1995-06-01), Ong
patent: 5440505 (1995-08-01), Fazio et al.
patent: 5450363 (1995-09-01), Christopherson et al.
patent: 5487033 (1996-01-01), Keeney et al.
patent: 5497119 (1996-03-01), Tedrow et al.
patent: 5515317 (1996-05-01), Wells et al.
patent: 5539690 (1996-07-01), Talreja et al.
patent: 5546042 (1996-08-01), Tedrow et al.
patent: 5553020 (1996-09-01), Keeney et al.
patent: 5566125 (1996-10-01), Fazio et al.
patent: 5594691 (1997-01-01), Bashir

Affiliated with

Also associated with

Rating

Multiple writes per a single erase for a nonvolatile memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multiple writes per a single erase for a nonvolatile memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multiple writes per a single erase for a nonvolatile memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-692601