Multiple well device and process of manufacture

Details Multiple well device and process of manufacture Multiple well device and process of manufacture

1996-07-15

1997-12-16

Niebling, John

Fishing, trapping, and vermin destroying

437 34, 437 57, H01L 21265

Patent

active

056984588

ABSTRACT:
A method of manufacture of a semiconductor device comprises forming a silicon dioxide film upon the surface of said device, forming patterns of silicon nitride upon the surface of said silicon dioxide film, ion implanting ions into said substrate adjacent to at least some of said silicon nitride patterns for well regions of a first polarity, forming a mask over said device, and deeply ion implanting with ions of opposite polarity into well regions of opposite polarity.

REFERENCES:
patent: 4584027 (1986-04-01), Metz, Jr. et al.
patent: 4697332 (1987-10-01), Joy et al.
patent: 4717683 (1988-01-01), Parrillo et al.
patent: 4728619 (1988-03-01), Pfiester et al.
patent: 4743563 (1988-05-01), Pfiester et al.
patent: 4847213 (1989-07-01), Pfiester
patent: 5086012 (1992-02-01), Sik
patent: 5091324 (1992-02-01), Hsu et al.
patent: 5091332 (1992-02-01), Bohr et al.
patent: 5384279 (1995-01-01), Stolmeijer et al.
patent: 5393677 (1995-02-01), Lien et al.
patent: 5393679 (1995-02-01), Yang
patent: 5413944 (1995-05-01), Lee
patent: 5416038 (1995-05-01), Hsue et al.
patent: 5432114 (1995-07-01), O
patent: 5434099 (1995-07-01), Hsue
patent: 5455188 (1995-10-01), Yang
patent: 5475761 (1995-12-01), Komori et al.
patent: 5478761 (1995-12-01), Komori et al.
patent: 5484742 (1996-01-01), Urai
patent: 5494843 (1996-02-01), Huang

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