Multiple wavelength p-n junction semiconductor laser with separa

Details Multiple wavelength p-n junction semiconductor laser with separa Multiple wavelength p-n junction semiconductor laser with separa

1990-03-08

1991-09-10

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 23, 372 45, 372 46, H01S 319

Patent

active

050480405

ABSTRACT:
A multiple wavelength semiconductor laser with two active layers separated by either a p-cladding layer or a p-n junction cladding layers. A p-disordered region and a n-disordered region extend through one of the active layers and into the intermediate cladding layer. A lateral waveguide is formed between the disordered regions in the active layer and a deep waveguide is formed beneath the p-disordered region in the other active layer. Since both active layers generate lightwaves at different wavelengths, forward-biasing the p-disordered region can cause either or both waveguides to emit radiation but at different wavelengths. The deep waveguide can also be a buried heterostructure laser.

REFERENCES:
patent: 4476563 (1984-10-01), Van Ruyven
patent: 4747110 (1988-05-01), Takahashi
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