Multiple-wavelength laser diode array using quantum well band fi

Details Multiple-wavelength laser diode array using quantum well band fi Multiple-wavelength laser diode array using quantum well band fi

1997-03-17

1999-11-09

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 23, H01S 319

Patent

active

059827998

ABSTRACT:
A multiple-wavelength laser diode array is described. A wavelength span of several tens of nanometers is achieved through band-filling of a quantum well active region. A multiple-wavelength array is formed by selectively introducing different amounts of optical loss into the array elements, to affect the threshold current density. With minimum losses, the laser oscillates at a long wavelength, while an element with high loss will undergo more bandfilling and be forced to emit at a shorter wavelength. To illustrate the structures which incorporate these additional, selective losses, a 2-red-wavelength AlGaInP laser array is described. In preferred embodiments, increased optical loss is achieved in an SBR type laser by narrowing the ridge region, or by reducing its thickness. In another type of laser, increased optical loss is achieved by a very thin upper cladding layer causing increased optical absorption in a close overlying cap or metal layer.

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D.P. Bour and G.A. Evans, Lateral Mode Discrimination in AlGaInP Selectively Buried Ridge Waveguide Lasers, IEE Proceeding-J, vol. 139, No. 1, Feb. 1992.
Stephen R. Chinn, Peter S. Zory and Axel R. Reisenger, A Model for GRIN-SCH-SQW Diode Lasers, Journal of Quantum Electroncs, vol. 24, No. II, Nov. 1988, pp. 2191-2214.
Yasunori Tokuda, Yuji Abe, Teruhito Matsui, Noriaki Tsukada and Takashi Nakayama, Dual-Wavelength Emission from a Twin-Stripe Single Quantum Well Laser, Appl. Phys. Lett 51(21), Nov. 23 1987, pp. 1664-1666.

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