Multiple trench semiconductor structure method

Details Multiple trench semiconductor structure method Multiple trench semiconductor structure method

1989-07-21

1991-04-02

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 72, H01L 2176

Patent

active

050047035

ABSTRACT:
A method of fabricating multiple trench semiconductor structures wherein a preferred embodiment includes forming an epitaxial silicon layer on a silicon substrate and a dielectric layer on the epitaxial silicon layer. An opening is then formed which extends through the dielectric layer and into the epitaxial silicon layer. Sidewall spacers are formed in the opening and an oxide lens is formed in the opening between the sidewall spacers. The sidewall spacers are then removed and trenches are formed in the opening where the sidewall spacers were formerly disposed.

REFERENCES:
patent: 4209349 (1980-06-01), Ho et al.

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