Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2011-08-16
2011-08-16
Le, Vu A (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S149000
Reexamination Certificate
active
08000139
ABSTRACT:
A multiple time programmable (MTP) memory cell, in accordance with an embodiment, includes a floating gate PMOS transistor, a high voltage NMOS transistor, and an n-well capacitor. The floating gate PMOS transistor includes a source that forms a first terminal of the memory cell, a drain and a gate. The high voltage NMOS transistor includes a source connected to ground, an extended drain connected to the drain of the PMOS transistor, and a gate forming a second terminal of the memory cell. The n-well capacitor includes a first terminal connected to the gate of the PMOS transistor, and a second terminal forming a third terminal of the memory cell. The floating gate PMOS transistor can store a logic state. Combinations of voltages can be applied to the first, second and third terminals of the memory cell to program, inhibit program, read and erase the logic state.
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Church Michael D.
Kalnitsky Alexander
Fogg & Powers LLC
Intersil America's Inc.
Le Vu A
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