Multiple stripe leaky mode laser

Coherent light generators – Particular active media – Semiconductor

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372 46, H01S 319

Patent

active

043487637

ABSTRACT:
A semiconductor laser is provided in which multiple stripe regions are optically coupled in leaky mode operation.

REFERENCES:
Scifres et al., "Phase-Locked Semiconductor Laser Array", Applied Physics Letters, vol. 33, No. 12, Dec. 1978, pp. 1015-1017.
Tsang et al., "A Densely Packed Monolithic Linear Array of GaAs-Al.sub.x Ga.sub.1-x As Strip Buried Heterostructure Lasers", Applied Physics Letters, vol. 34, No. 2, Jan. 1979, pp. 162-165.
Scifres et al., "High-Power Coupled-Multiple-Stripe Phase-Locked Injection Laser", Applied Physics Letters, vol. 34, No. 4, Feb. 1979, pp. 259-261.
Saito et al., "Buried-Heterostructure AlGaAs Lasers", IEEE Journal of Quantum Electronics, vol. QE-16, No. 2, Feb. 1980, pp. 205-206.
Burnham et al., "Improved Leaky Mole Buried Heterostructure (BH) Injection Lasers", Xerox Disclosure Journal, vol. 4, No. 3, May/Jun. 1979, pp. 357-358.

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