Coherent light generators – Particular active media – Semiconductor
Patent
1980-08-07
1982-09-07
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
372 46, H01S 319
Patent
active
043487637
ABSTRACT:
A semiconductor laser is provided in which multiple stripe regions are optically coupled in leaky mode operation.
REFERENCES:
Scifres et al., "Phase-Locked Semiconductor Laser Array", Applied Physics Letters, vol. 33, No. 12, Dec. 1978, pp. 1015-1017.
Tsang et al., "A Densely Packed Monolithic Linear Array of GaAs-Al.sub.x Ga.sub.1-x As Strip Buried Heterostructure Lasers", Applied Physics Letters, vol. 34, No. 2, Jan. 1979, pp. 162-165.
Scifres et al., "High-Power Coupled-Multiple-Stripe Phase-Locked Injection Laser", Applied Physics Letters, vol. 34, No. 4, Feb. 1979, pp. 259-261.
Saito et al., "Buried-Heterostructure AlGaAs Lasers", IEEE Journal of Quantum Electronics, vol. QE-16, No. 2, Feb. 1980, pp. 205-206.
Burnham et al., "Improved Leaky Mole Buried Heterostructure (BH) Injection Lasers", Xerox Disclosure Journal, vol. 4, No. 3, May/Jun. 1979, pp. 357-358.
Ackley Donald E.
Engelmann Reinhart W. H.
Kerps Dietrich
Davie James W.
Hewlett--Packard Company
Stark Jon R.
LandOfFree
Multiple stripe leaky mode laser does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multiple stripe leaky mode laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multiple stripe leaky mode laser will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1345760