Multiple stage self-biasing RF transistor circuit

Details Multiple stage self-biasing RF transistor circuit Multiple stage self-biasing RF transistor circuit

1998-04-20

2000-05-16

Kim, Jung Ho

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

Nonlinear amplifying circuit

455333, G06G 726

Patent

active

06064253&

ABSTRACT:
First and second spaced-apart planar circuit ground conductors are formed on a base substrate. Multiple stages of an amplifier each have a field effect transistor (FET) flip mounted onto the substrate. A signal-return line couples the sources of the FETs together and functions as a radio frequency (RF) grounds for the amplifier. Direct-current-blocking coplanar couplers couple the amplifier input and output to external circuits. A single voltage supply applies a bias voltage to the drains of the FETs. A source resistance device couples each source terminal to circuit ground. The source resistance devices may be formed of two series-connected resistors. The gate of each FET is coupled to one of the circuit ground conductors through one of the source resistors. The other source resistor thereby provides a gate-to-source voltage for biasing the FET. Alternative embodiments provide a community bias circuit in which signal-return lines of transistors conducting different signals are interconnected and coupled to the bias circuit ground.

REFERENCES:
patent: 4952827 (1990-08-01), Leipold et al.
patent: 5361406 (1994-11-01), Wignot et al.
patent: 5648739 (1997-07-01), Walther et al.
patent: 5754074 (1998-05-01), Kelly
patent: 5809410 (1998-09-01), Stuebing et al.

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